Electronic structure, Fermi surface, and antiferromagnetism of high-Tc cuprate materials and their doping dependence

Abstract

We determine the electronic state of the antiferromagnetic CuO2 layer of high-Tc cuprate materials on the basis of the three-band Hubbard model and derive the doping dependence of the antiferromagnetic order, electronic structure, and the Fermi surface. We solve the equation of motion for the single-electron Green’s function taking into account the strong but finite Hubbard correlation and assuming the commensurate antiferromagnetic order. The result shows qualitatively correct behavior, i.e., the decline of the antiferromagnetic order along with the doping fraction of holes or electrons from the half-filled insulating phase. We also discuss the Fermi-surface structures dependent on the hole or electron doping fraction and compare these with the results of the angle-resolved photoemission spectroscopy.

Source-reported materials — not catalogue approval

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