Electron superconductivity in coupled electron-hole layers

J. S. Thakur; D. Neilson; M. P. Das

doi:10.1103/PhysRevB.57.1801

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Electron superconductivity in coupled electron-hole layers

J. S. Thakur, D. Neilson, M. P. Das

DOI 10.1103/PhysRevB.57.1801 · Physical Review B

T1

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Abstract

We investigate superconducting pairing of electrons when coupled to an adjacent layer of holes in a GaAs semiconductor heterostructure. When the density of the electrons is much higher than the density of holes, the repulsive electron-electron interaction is reduced by dynamical coupling to the strongly correlated holes. For the effective-mass ratio of electrons to holes in GaAs we find that the effective electron-electron interaction becomes attractive when the layer separation is smaller than a critical value. With equal effective masses this effect does not occur. We estimate the attraction and repulsion parameters for a superconducting state in the electron layer. A typical value of the superconducting transition temperature for experimentally accessible carrier densities and layer separations is Tc=100 mK.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
GaAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.1	Pressure not reported	unknown