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Double-step resistive superconducting transitions of indium and gallium in porous glass

C. Tien, C. S. Wur, K. J. Lin, E. V. Charnaya, Yu. A. Kumzerov

DOI 10.1103/PhysRevB.61.14833 · Physical Review B

T1

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Abstract

We studied indium and gallium in porous glass by resistance and magnetization measurements. For indium in porous glass, a very sharp superconducting transition is observed at T1=4.0±0.05K. When a 1.5 T magnetic field is applied, there is a second transition at T2∼3.5K. At 3.5 K, the field dependence of resistance R(H) indicates two transitions at Hcu∼1.4 and Hcl∼0.4T separated by a plateau. For indium in porous glass, the origins of two-step transitions in R(T) and R(H) might be the same. At Hcu (or T1) the individual grains of indium in porous glass become superconductors and at Hcl (or T2) all grains are coupled. For gallium in porous glass, two superconducting transitions of R(T) at T1=7.0 and T2=6.3K are observed. Between 6.35 and 6.30 K, R(T) increases sharply with decreasing temperature. The quasiparticle tunneling or the conductor-superconductor-conductor coupling might cause the sharp rise in resistance between 6.35 and 6.30 K. At 6 K, there are two transitions at Hcu=2.1T and Hcl=1.1T in the R(H) for gallium in porous glass. The two different transitions of R(H) might be caused by a filamentary “internal structure” of gallium crystallites. There is no diamagnetism at T1. The magnetic transition temperature TM at 3, 4, 5, 6, and 7 T are measured; for all the cases, TM<T2.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
In

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4Pressure not reportedonset
In

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3.5Pressure not reportedzero_resistance
Ga

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7Pressure not reportedonset
Ga

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6.3Pressure not reportedmidpoint
Sm1-xCexCuO4-y

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—Pressure not reportedunknown

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