Optical study of superconducting Ga-rich layers in silicon
T. Fischer, A. V. Pronin, R. Skrotzki, T. Herrmannsdörfer, J. Wosnitza, J. Fiedler, V. Heera, M. Helm, E. Schachinger
DOI 10.1103/PhysRevB.87.014502 · Physical Review B
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Abstract
We performed phase-sensitive terahertz (0.12–1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition Tcmiddle=6.7 K we find clear signatures of the formation of a superconducting condensate and of the opening of an energy gap in the optical spectra. The London penetration depth λ(T) and the condensate density ns=λ2(0)/λ2(T) as functions of temperature demonstrate behavior typical for conventional superconductors with λ(0)=1.8μm. The terahertz spectra can be well described within the framework of Eliashberg theory with strong electron-phonon coupling: the zero-temperature energy gap is 2Δ(0)=2.64 meV and 2Δ(0)/kBTc=4.6, consistent with the amorphous state of Ga. At temperatures just above Tc, the optical spectra demonstrate Drude behavior.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ga Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6.7 | Pressure not reported | midpoint |
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