Optical study of superconducting Ga-rich layers in silicon

Abstract

We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting condensate and of the opening of an energy gap in the optical spectra. The London penetration depth, λ(T), and the condensate density, n_{s} = λ^{2} 0)/λ^{2}(T), as functions of temperature demonstrate behavior, typical for conventional superconductors with λ(0) = 1.8 μm. The terahertz spectra can be well described within the framework of Eliashberg theory with strong electron-phonon coupling: the zero-temperature energy gap is 2Δ(0) = 2.64 meV and 2Δ(0)/k_{B}T_{c} = 4.6 \pm 0.1, consistent with the amorphous state of Ga. At temperatures just above T_{c}, the optical spectra demonstrate Drude behavior.

Source-reported materials — not catalogue approval

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