Temperature dependence of zero-bias resistances of a single resistance-shunted Josephson junction
Naoki Kimura, Takeo Kato
DOI 10.1103/PhysRevB.69.012504 · Physical Review B
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Abstract
Zero-bias resistances of a single resistance-shunted Josephson junction are calculated as a function of the temperature by means of the path-integral Monte Carlo method in the case where a charging energy EC is comparable with a Josephson energy EJ. The low-temperature behavior of the zero-bias resistance changes around α=RQ/RS=1, where RS is a shunt resistance and RQ=h/(2e)2. The temperature dependence of the zero-bias resistance shows a power-law-like behavior whose exponent depends on EJ/EC. These results are compared with the experiments on resistance-shunted Josephson junctions.
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