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Superconducting and normal-state properties of heavily hole-doped diamond

V. A. Sidorov, E. A. Ekimov, S. M. Stishov, E. D. Bauer, J. D. Thompson

DOI 10.1103/PhysRevB.71.060502 · Physical Review B

T1

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Abstract

We report measurements of the specific heat, Hall effect, upper critical field, and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure, high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set of materials parameters that favor a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism at high hole doping.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
GeTe

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0.5Pressure not reportedunknown
SnTe

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0.5Pressure not reportedunknown
SrTiO3-δ

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0.5Pressure not reportedunknown
MgB2

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40Pressure not reportedunknown

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