Dissipation in quasi-one-dimensional superconducting single-crystal Sn nanowires
Mingliang Tian, Jinguo Wang, James S. Kurtz, Ying Liu, M. H. W. Chan, Theresa S. Mayer, Thomas E. Mallouk
DOI 10.1103/PhysRevB.71.104521 · Physical Review B
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Abstract
Electrical transport measurements were made on single-crystal Sn nanowires to understand the intrinsic dissipation mechanisms of a one-dimensional superconductor. While the resistance of wires of diameter larger than 70nm drops precipitously to zero at Tc near 3.7K, a residual resistive tail extending down to low temperature is found for wires with diameters of 20 and 40nm. As a function of temperature, the logarithm of the residual resistance appears as two linear sections, one within a few tenths of a degree below Tc and the other extending down to at least 0.47K, the minimum temperature of the measurements. The residual resistance is found to be ohmic at all temperatures below Tc of Sn. These findings are suggestive of a thermally activated phase slip process near Tc and quantum fluctuation-induced phase slip process in the low-temperature regime. When the excitation current exceeds a critical value, the voltage-current (V−I) characteristics show a series of discrete steps in approaching the normal state.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.7 | Pressure not reported | onset |
| Sn Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.1 | Pressure not reported | onset |
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