Relating intermodulation distortion to the generating nonlinearity for high-temperature superconductor microwave experiments
R. Hott, A. G. Zaitsev, R. Schneider
DOI 10.1103/PhysRevB.72.214507 · Physical Review B
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Abstract
We demonstrate how to derive from the intermodulation distortion (IMD) measured as a function of signal power the respective relative increase function ΔZ∕Z0 of the governing nonlinear response function Z. We apply this approach to our IMD investigations on the microwave properties of high-temperature superconductors (HTS) and show how the experimental input and output quantities can be related to their theoretical model counterparts. The quantitative comparison of ΔZ∕Z0 with the relative increase of the hf surface resistance ΔRS∕RS0 and of the hf surface reactance ΔXS∕XS0, both measured as functions of hf power, allows us to conclude that the IMD generation in HTS must be predominantly due to the hf-power-induced increase ΔRS, with a negligible respective contribution from ΔXS.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| YBa2Cu3O7-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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