Metal-insulator transition and superconductivity in boron-doped diamond
T. Klein, P. Achatz, J. Kacmarcik, C. Marcenat, F. Gustafsson, J. Marcus, E. Bustarret, J. Pernot, F. Omnes, Bo E. Sernelius, C. Persson, A. Ferreira da Silva, C. Cytermann
DOI 10.1103/PhysRevB.75.165313 · Physical Review B
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Abstract
We report on a detailed analysis of the transport properties and superconducting critical temperatures of boron-doped diamond films grown along the {100} direction. The system presents a metal-insulator transition (MIT) for a boron concentration (nB) on the order of nc∼4.5×1020cm−3, in excellent agreement with numerical calculations. The temperature dependence of the conductivity and Hall effect can be well described by variable range hopping for nB<nc with a characteristic hopping temperature T0 strongly reduced due to the proximity of the MIT. All metallic samples (i.e., for nB>nc) present a superconducting transition at low temperature. The zero-temperature conductivity σ0 deduced from fits to the data above the critical temperature (Tc) using a classical quantum interference formula scales as σ0∝(nB∕nc−1)ν with ν∼1. Large Tc values (⩾0.4K) have been obtained for boron concentration down to nB∕nc∼1.1 and Tc surprisingly mimics a (nB∕nc−1)1∕2 law. Those high Tc values can be explained by a slow decrease of the electron-phonon coupling parameter λ and a corresponding drop of the Coulomb pseudopotential μ* as nB→nc.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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