Core-level electronic structure evolution of heavily boron-doped superconducting diamond studied with hard x-ray photoemission spectroscopy
T. Yokoya, E. Ikenaga, M. Kobata, H. Okazaki, K. Kobayashi, A. Takeuchi, A. Awaji, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, K. Kobayashi, H. Kawarada, T. Oguchi
DOI 10.1103/PhysRevB.75.205117 · Physical Review B
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Abstract
Hard x-ray photoemission spectroscopy has been used to study intrinsic core-level electronic structure evolution of heavily boron-doped superconducting diamond films made with a microwave plasma-assisted chemical-vapor deposition method. The boron concentration dependent C1s core-level spectra show systematic changes in the shift of the main peak and in the evolution of an additional feature at 1.1–1.3eV lower binding energy than the main peak. In comparison to a low boron concentration nonsuperconducting diamond, the higher boron concentration doped diamond films show formation of several additional features in the B1s core levels. Based on the present results, the local chemical environments around the doped boron atoms, the efficiency of hole doping by boron doping, and the implications for a recent x-ray absorption study are discussed.
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