Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition
Akihiro Kawano, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada
DOI 10.1103/PhysRevB.82.085318 · Physical Review B
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Abstract
The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3×1020 cm−3 in substitutional site is required for inducing superconductivity in diamond.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| SrTiO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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