Evolution of charge carriers for transport in electron-doped cuprate superconductor La1.89Ce0.11CuO4 thin films
K. Jin, B. Y. Zhu, J. Yuan, H. Wu, L. Zhao, B. X. Wu, Y. Han, B. Xu, L. X. Cao, X. G. Qiu, B. R. Zhao
DOI 10.1103/PhysRevB.75.214501 · Physical Review B
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Abstract
To reveal the evolution of charge carriers to the transport in La1.89Ce0.11CuO4, we carefully measured the temperature and magnetic-field dependences of the Hall resistivity (ρxy) and longitudinal resistivity (ρxx). Two sign reversals of the Hall resistivity are observed in the normal state. In addition, the ρxy and ρxx show B2 dependence in the temperature region of 40–50K, similar to the behavior of the compensated metal; that is, the effective concentrations of electrons (ne*) and holes (nh*) are nearly equal. The possible origin of the sign reversal is attributed to the competition between ne*∕nh* and τe∕τh (the relaxation time ratio of electrons to holes), and the change of cyclotron orbits induced by the magnetic field is also considered.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La1.89Ce0.11CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 24 | Pressure not reported | unknown |
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