Pair breaking by nonmagnetic impurities in the noncentrosymmetric superconductor CePt3Si
M. Nicklas, F. Steglich, J. Knolle, I. Eremin, R. Lackner, E. Bauer
DOI 10.1103/PhysRevB.81.180511 · Physical Review B
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Abstract
We have studied the effect of Ge substitution and pressure on the heavy-fermion superconductor CePt3Si. Ge substitution on the Si site acts as negative chemical pressure leading to an increase in the unit-cell volume but also introduces chemical disorder. We carried out electrical resistivity and ac heat-capacity experiments under hydrostatic pressure on CePt3Si1−xGex (x=0,0.06). Our experiments show that the suppression of superconductivity in CePt3Si1−xGex is mainly caused by the scattering potential, rather than volume expansion, introduced by the Ge dopants. The antiferromagnetic order is essentially not affected by the chemical disorder.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.75 | Pressure unresolved | unknown |
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.5 | Pressure unresolved | unknown |
| CePt3Si0.94Ge0.06 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.29 | Pressure unresolved | unknown |
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