Low-Temperature Susceptibility of the Noncentrosymmetric Superconductor CePt3Si
D. P. Young, M. Moldovan, X. S. Wu, P. W. Adams, Julia Y. Chan
DOI 10.1103/PhysRevLett.94.107001 · Physical Review Letters
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Abstract
We report ac susceptibility measurements of polycrystalline CePt3Si down to 60 mK and in applied fields up to 9 T. In a zero applied field, a full Meissner state emerges at temperatures T/Tc<0.3, where Tc=0.65 K is the onset transition temperature. Though transport measurements show a relatively high upper critical field Bc2∼4–5 T, the low-temperature susceptibility χ′ is quite fragile to the applied field, with χ′ diminishing rapidly in fields of a few kG. Interestingly, the field dependence of χ′ is well described by the power law 4πχ′+1=(B/Bc)1/2, where Bc is the field at which the onset of resistance is observed in transport measurements.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.65 | Pressure not reported | onset |
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.72 | Pressure not reported | midpoint |
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.56 | Pressure not reported | midpoint |
| V3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 17 | Pressure not reported | unknown |
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