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Low Temperature Susceptibility of the Noncentrosymmetric Superconductor CePt_3Si

D. P. Young, M. Moldovan, X. S. Wu, J. Y. Chan, P. W. Adams

arXiv:cond-mat/0406645 · DOI 10.1103/PhysRevLett.94.107001 · 2004-06-25 · Physical review letters

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Abstract

We report ac susceptibility measurements of polycrystalline CePt_3Si down to 60 mK and in applied fields up to 9 T. In zero field, a full Meissner state emerges at temperatures T/Tc < 0.3, where Tc=0.65 K is the onset transition temperature. Though transport measurements show a relatively high upper critical field Bc2 ~ 4-5 T, the low temperature susceptibility, χ', is quite fragile to applied field, with χ' diminishing rapidly in fields of a few kG. Interestingly, the field dependence of χ' is well described by the power law, 4πχ'=(B/B_c)^{1/2}, where Bc is the field at which the onset of resistance is observed in transport measurements.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
CePt3Si

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0.65Pressure not reportedonset
CePt3Si

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0.72Pressure not reportedmidpoint
Ce0.98La0.02Pt3Si

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0.05Pressure not reportedunknown
V3Si

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17Pressure not reportedunknown

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