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Chemical potential jump between the hole-doped and electron-doped sides of ambipolar high-Tc cuprate superconductors

M. Ikeda, M. Takizawa, T. Yoshida, A. Fujimori, Kouji Segawa, Yoichi Ando

DOI 10.1103/PhysRevB.82.020503 · Physical Review B

T1

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Abstract

In order to study an intrinsic chemical potential jump between the hole-doped and electron-doped high-Tc superconductors, we have performed core-level x-ray photoemission spectroscopy measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La2−xSrxCuO4 and the electron-doped system Nd2−xCexCuO4, we have estimated the true chemical potential jump between the hole-doped and electron-doped YLBLCO to be ∼0.8 eV, which is much smaller than the optical gaps of 1.4–1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Y0.38La0.62Ba1.74La0.26Cu3Oy

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—Pressure not reportedunknown
La2-xSrxCuO4

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—Pressure not reportedunknown
Nd2-xCexCuO4

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—Pressure not reportedunknown
Bi2Sr2Ca1-x(Pr,Eu)xCu2O8+δ

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—Pressure not reportedunknown
NaxCa2-xCuO2Cl2

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—Pressure not reportedunknown
YBa2Cu3Oy

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—Pressure not reportedunknown

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