Evaluation of spin polarization in p-In0.96Mn0.04As using Andreev reflection spectroscopy including inverse proximity effect
Tatsushi Akazaki, Takehito Yokoyama, Yukio Tanaka, Hiro Munekata, Hideaki Takayanagi
DOI 10.1103/PhysRevB.83.155212 · Physical Review B
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Abstract
We report on carrier transport across a superconductor/ferromagnetic semiconductor junction with a highly transparent metallic contact, Nb/p-In0.96Mn0.04As. Below ~10 K, p-In0.96Mn0.04As becomes ferromagnetic, as evidenced by the hysteretic transverse resistance caused by the anomalous Hall effect. Below the superconducting critical temperature Tc of the Nb electrodes (8.2 K), a conductance reduction occurs within the bias voltage that is comparable to the Nb superconducting energy gap. A rather moderate slope in the differential conductance curves within the gap region indicates the partial suppression of the Andreev reflection caused by spin-polarized carriers in p-In0.96Mn0.04As. Spin polarization P in p-In0.96Mn0.04As has been extracted by fitting the measured differential conductance curves with a newly modified Blonder-Tinkham-Klapwijk model with both spin polarization and the inverse proximity effect (mod2-BTK model). The extracted P value is P = 0.725 at 0.5 K, and it decreases gradually with increasing temperature.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8.2 | Pressure not reported | unknown |
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