Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene
Can-Li Song, Yi-Lin Wang, Ye-Ping Jiang, Zhi Li, Lili Wang, Ke He, Xi Chen, Xu-Cun Ma, Qi-Kun Xue
DOI 10.1103/PhysRevB.84.020503 · Physical Review B
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Abstract
We report on molecular beam epitaxy growth of stoichiometric and superconducting FeSe crystalline thin films on double-layer graphene. Layer-by-layer growth of high-quality films has been achieved in a well-controlled manner by using Se-rich condition, which allow us to investigate the thickness-dependent superconductivity of FeSe. In situ low-temperature scanning tunneling spectra reveal that the local superconducting gap in the quasiparticle density of states is visible down to two triple layers for the minimum measurement temperature of 2.2 K, and that the transition temperature Tc scales inversely with film thickness.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37 | Pressure not reported | unknown |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.8 | Pressure not reported | onset |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.7 | Pressure not reported | onset |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9.3 | Pressure not reported | unknown |
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