Effect of magnetic Gd impurities on the superconducting state of amorphous Mo-Ge thin films with different thickness and morphology

Hyunjeong Kim; Anil Ghimire; Shirin Jamali; Thaddee K. Djidjou; Jordan M. Gerton; A. Rogachev

doi:10.1103/PhysRevB.86.024518

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Effect of magnetic Gd impurities on the superconducting state of amorphous Mo-Ge thin films with different thickness and morphology

Hyunjeong Kim, Anil Ghimire, Shirin Jamali, Thaddee K. Djidjou, Jordan M. Gerton, A. Rogachev

DOI 10.1103/PhysRevB.86.024518 · Physical Review B

T1

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Abstract

We studied the effect of magnetic doping with Gd atoms on the superconducting properties of amorphous Mo70Ge30 films. We observed that in uniform films deposited on amorphous Ge, the pair-breaking strength per impurity strongly decreases with film thickness initially and saturates at a finite value in films with thickness below the spin-orbit scattering length. The variation is likely caused by surface-induced magnetic anisotropy and is consistent with the fermionic mechanism of superconductivity suppression. In thin films deposited on SiN the pair-breaking strength becomes zero. Possible reasons for this anomalous response are discussed. The morphological distinctions between the films of the two types were identified using atomic force microscopy with a carbon nanotube tip.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Mo70Ge30 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	midpoint