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Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2

Kensei Terashima, Junki Sonoyama, Takanori Wakita, Masanori Sunagawa, Kanta Ono, Hiroshi Kumigashira, Takayuki Muro, Masanori Nagao, Satoshi Watauchi, Isao Tanaka, Hiroyuki Okazaki, Yoshihiko Takano, Osuke Miura, Yoshikazu Mizuguchi, Hidetomo Usui, Katsuhiro Suzuki, Kazuhiko Kuroki, Yuji Muraoka, Takayoshi Yokoya

DOI 10.1103/PhysRevB.90.220512 · Physical Review B

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Abstract

The electronic structure of nearly optimally doped novel superconductor LaO1−xFxBiS2(x=0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF shows a squarelike distribution around the Γ(Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
LaO0.54F0.46BiS2

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3.1Pressure not reportedzero_resistance
LaO1-xFxBiS2

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10.6Pressure not reportedunknown

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