← Back to search

Strongly enhanced superconductivity in doped monolayer MoS2 by strain

Shuming Zeng, Yinchang Zhao, Geng Li, Jun Ni

DOI 10.1103/PhysRevB.94.024501 · Physical Review B

T1

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

The effects of strain on the stability, electron-phonon coupling, and superconductivity of doped monolayer MoS2 are investigated systematically using first-principles calculations. We find that most of the electron-phonon coupling in doped monolayer MoS2 is attributed to the in-plane vibrations of Mo atoms, which can be further tuned by strain. By applying biaxial compressive strain, we find a large enhancement in the superconducting transition temperature (Tc) and we obtain a Tc of 22K at the optimal hole doping concentration, while the electron-phonon coupling of electron-doped structure is reduced due to the direct-indirect band-gap insulator transition. Our results reveal that the Fermi surface nesting-driven mechanism is mainly responsible for phonon softening and superconductivity in monolayer MoS2, suggesting that doping combined with strain is efficient at tuning electron-phonon coupling and superconductivity.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
MoS2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

22Pressure not reportedunknown
MoS2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

20Pressure not reportedunknown
MoS2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

17Pressure not reportedunknown

Similar papers