← Back to search

Characteristics of superconducting tungsten silicide WxSi1−x for single photon detection

X. Zhang, A. Engel, Q. Wang, A. Schilling, A. Semenov, M. Sidorova, H.-W. Hübers, I. Charaev, K. Ilin, M. Siegel

DOI 10.1103/PhysRevB.94.174509 · Physical Review B

T1

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

Superconducting properties of three series of amorphous WxSi1−x films with different thickness and stoichiometry were investigated by dc transport measurements in a magnetic field up to 9 T. These amorphous WxSi1−x films were deposited by magnetron cosputtering of the elemental source targets onto silicon substrates at room temperature and patterned in the form of bridges by optical lithography and reactive ion etching. Analysis of the data on magnetoconductivity allowed us to extract the critical temperatures, superconducting coherence lengths, magnetic penetration depths, and diffusion constants of electrons in the normal state as functions of film thickness for each stoichiometry. Two basic time constants were derived from transport and time-resolving measurements. A dynamic process of the formation of a hotspot was analyzed in the framework of a diffusion-based vortex-entry model. We used a two-stage diffusion approach and defined a hotspot size by assuming that the quasiparticles and normal-state electrons have the same diffusion constant. With this definition and these measured material parameters, the hotspot in the 5-nm-thick W0.85Si0.15 film had a diameter of 107 nm at the peak of the number of nonequilibrium quasiparticles.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NbN

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

10.5Pressure not reportedunknown
NbTiN

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

9.5Pressure not reportedunknown
NbSi

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2Pressure not reportedunknown
TaN

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

8Pressure not reportedunknown
W0.75Si0.25

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.86Pressure not reportedmidpoint
W0.75Si0.25

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.88Pressure not reportedmidpoint
W0.8Si0.2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

4.02Pressure not reportedmidpoint
W0.8Si0.2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

4.08Pressure not reportedmidpoint
W0.85Si0.15

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.83Pressure not reportedmidpoint
W0.85Si0.15

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.85Pressure not reportedmidpoint

Similar papers