Sign reversal of magnetoresistance in a perovskite nickelate by electron doping
Koushik Ramadoss, Nirajan Mandal, Xia Dai, Zhong Wan, You Zhou, Leonid Rokhinson, Yong P. Chen, Jiangpin Hu, Shriram Ramanathan
DOI 10.1103/PhysRevB.94.235124 · Physical Review B
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Abstract
We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electron-doped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Undoped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear nonsaturating positive MR∼0.2% at 50 K. The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.
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