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Josephson junction with variable thickness of the dielectric layer

T. Dobrowolski, A. Jarmoliński

DOI 10.1103/PhysRevE.101.052215 · Physical Review E

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Abstract

The dynamics of the fluxon in the Josephson junction is studied. The dielectric layer of the junction has a variable thickness. It is shown that the modified area of the junction acts on the fluxon as a potential barrier. The relation between the critical bias current and the thickness of the dielectric layer is analytically and numerically determined.

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