Localization of Metal-Induced Gap States at the Metal-Insulator Interface: Origin of Flux Noise in SQUIDs and Superconducting Qubits
SangKook Choi, Dung-Hai Lee, Steven G. Louie, John Clarke
DOI 10.1103/PhysRevLett.103.197001 · Physical Review Letters
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Abstract
The origin of magnetic flux noise in superconducting quantum interference devices with a power spectrum scaling as 1/f (f is frequency) has been a puzzle for over 20 years. This noise limits the decoherence time of superconducting qubits. A consensus has emerged that the noise arises from fluctuating spins of localized electrons with an areal density of 5×1017 m−2. We show that, in the presence of potential disorder at the metal-insulator interface, some of the metal-induced gap states become localized and produce local moments. A modest level of disorder yields the observed areal density.
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