← Back to search

Localization of Metal-Induced Gap States at the Metal-Insulator Interface:Origin of Flux Noise in SQUIDs and Superconducting Qubits

SangKook Choi, Dung-Hai Lee, Steven G. Louie, John Clarke

arXiv:0907.3904 · DOI 10.1103/PhysRevLett.103.197001 · 2009-07-22 · Physical review letters

T3experimental76 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

The origin of magnetic flux noise in Superconducting Quantum Interference Devices with a power spectrum scaling as $1/f$ ($f$ is frequency) has been a puzzle for over 20 years. This noise limits the decoherence time of superconducting qubits. A consensus has emerged that the noise arises from fluctuating spins of localized electrons with an areal density of $5\times10^{17}$m$^{-2}$. We show that, in the presence of potential disorder at the metal-insulator interface, some of the metal-induced gap states become localized and produce local moments. A modest level of disorder yields the observed areal density.

Similar papers