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Theoretical Investigation of the Four-Layered Self-Doped High-Tc Superconductors: Evidence of the Pair Tunneling Effect

Tao Zhou

DOI 10.1103/PhysRevLett.106.167001 · Physical Review Letters

T1

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Abstract

Based on a four-layered self-doped t−J type model and the slave-boson mean-field approach, we study theoretically the superconductivity in the electron-doped and hole-doped layers. The neighbor layers are coupled through both the single electron interlayer hopping and pair tunneling effect. The superconducting gap magnitude for the electron-doped band is nearly twice that of the hole-doped one, which contrasts with our previous understanding of the electron-hole asymmetry in high-Tc superconductors but is consistent with recent angle-resolved photoemission spectroscopy experiments in four-layered materials Ba2Ca3Cu4O8F2. Our results propose that the pair tunneling effect is important to examine the multilayered superconducting materials.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Ba2Ca3Cu4O8F2

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60Pressure not reportedunknown

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