Theoretical investigation of the four-layered self-doped high-T$_c$ superconductors: evidence of pair tunneling effect
Tao Zhou
arXiv:1011.6040 · DOI 10.1103/PhysRevLett.106.167001 · 2010-11-28 · Physical review letters
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Abstract
Based on a four-layered self-doped $t-J$ type model and the slave-boson mean-field approach, we study theoretically the superconductivity in the electron-doped and hole-doped layers. The neighbor layers are coupled through both the single electron interlayer hopping and pair tunneling effect. The superconducting gap magnitude for the electron-doped band is nearly twice of that of the hole-doped one, which contrasts to our previous understanding of the electron-hole asymmetry in high-T$_c$ superconductors but consistent with recent angle-resolved-photoemission-spectroscopy experiments in four-layered materials Ba$_2$Ca$_3$Cu$_4$O$_8$F$_2$. Our results propose that the pair tunneling effect is important to examine the multi-layered superconducting materials.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ba2Ca3Cu4O8F2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 60 | Pressure not reported | unknown |
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