Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)−(7×3)−In

Takashi Uchihashi; Puneet Mishra; Masakazu Aono; Tomonobu Nakayama

doi:10.1103/PhysRevLett.107.207001

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Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)−(7×3)−In

Takashi Uchihashi, Puneet Mishra, Masakazu Aono, Tomonobu Nakayama

DOI 10.1103/PhysRevLett.107.207001 · Physical Review Letters

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Abstract

Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms [Si(111)−(7×3)−In]. The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. I−V characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density J2D,c is estimated to be as high as 1.8 A/m at 1.8 K. The temperature dependence of J2D,c indicates that the surface atomic steps play the role of strongly coupled Josephson junctions.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Si(111)-(7x3)-In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	2.8	Pressure not reported	zero_resistance
Si(111)-(7x3)-In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	3.14	Pressure not reported	onset