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Direct Visualization of Ambipolar Mott Transition in Cuprate CuO2 Planes

Yong Zhong, Jia-Qi Fan, Rui-Feng Wang, ShuZe Wang, Xuefeng Zhang, Yuying Zhu, Ziyuan Dou, Xue-Qing Yu, Yang Wang, Ding Zhang, Jing Zhu, Can-Li Song, Xu-Cun Ma, Qi-Kun Xue

DOI 10.1103/PhysRevLett.125.077002 · Physical Review Letters

T1

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Abstract

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott insulator-metal transition in Sr1−xLaxCuO2+y cuprate films that cover both the electron- and hole-doped regimes. Tunneling conductance measurements directly on the copper-oxide (CuO2) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring the atomic-scale electronic response of CuO2 to substitutional dopants and intrinsic defects in a sister compound Sr0.92Nd0.08CuO2. The results may be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sr1-xLaxCuO2+y

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—Pressure not reportedunknown
Sr0.92Nd0.08CuO2

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—Pressure not reportedunknown
La2-xCexCuO4

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—Pressure not reportedunknown
La2-xSrxCuO4

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—Pressure not reportedunknown

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