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Indications of an Electronic Phase Transition in Two-Dimensional Superconducting YBa2Cu3O7−x Thin Films Induced by Electrostatic Doping

Xiang Leng, Javier Garcia-Barriocanal, Boyi Yang, Yeonbae Lee, J. Kinney, A. M. Goldman

DOI 10.1103/PhysRevLett.108.067004 · Physical Review Letters

T1

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Abstract

We successfully tuned an underdoped ultrathin YBa2Cu3O7−x film into the overdoped regime by means of electrostatic doping using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step doping mechanism for electrostatic doping was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a doping level of p∼0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal doping level.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu3O7-x

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42Pressure not reportedzero_resistance
YBa2Cu3O7-x

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67Pressure not reportedzero_resistance
YBa2Cu3O7-x

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83Pressure not reportedonset
La2-xSrxCuO4

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—Pressure not reportedunknown
YBa2Cu3O7

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—Pressure not reportedunknown
Bi2Sr1.51La0.49CuO6+δ

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—Pressure not reportedunknown

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