Effects of field-induced hole-density modulation on normal-state and superconducting transport in YBa2Cu3O7−x
X. X. Xi, C. Doughty, A. Walkenhorst, C. Kwon, Q. Li, T. Venkatesan
DOI 10.1103/PhysRevLett.68.1240 · Physical Review Letters
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Abstract
The hole-density dependence of the normal-state resistivity and transition temperature Tc of YBa2Cu3O7−x was studied using the electric field effect in ultrathin films of 1 to 8 unit cells thickness. The change in resistivity was found to be equal to the field-induced variation in the areal carrier density, leading to a relation that the conductivity is proportional to the hole density. A similar linear dependence was also found in Tc. However, a saturation occurred in both cases but at different hole densities. The result reveals different effects of hole filling in influencing normal-state and superconducting transport of YBa2Cu3O7−x.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| YBa2Cu3O7-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 80 | Pressure not reported | zero_resistance |
| YBa2Cu3O7-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 40 | Pressure not reported | zero_resistance |
| YBa2Cu3O7-x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 30 | Pressure not reported | zero_resistance |
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