Universal Superconductor-Insulator Transition and Tc Depression in Zn-Substituted High- Tc Cuprates in the Underdoped Regime
Y. Fukuzumi, K. Mizuhashi, K. Takenaka, S. Uchida
DOI 10.1103/PhysRevLett.76.684 · Physical Review Letters
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Abstract
The experimental results are presented on the in-plane resistivity for Zn-substituted single crystals of YBa2Cu3O7−y and La2−xSrxCuO4 with various hole densities. The primary effect of Zn is to produce a large residual resistivity ( ρ0) as a potential scatterer in the unitarity limit. In the underdoped regime, due also to low carrier density in the CuO2 plane, only a few percent Zn is sufficient for ρ0 to reach the critical value near the universal two-dimensional resistance h/4e2 and to induce a superconductor-insulator transition. By contrast, the universal behavior is not seen in the highly doped regime, suggestive of a radical change in the electronic state.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 27 | Pressure unresolved | unknown |
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37 | Pressure unresolved | unknown |
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 32 | Pressure unresolved | unknown |
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