Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al/n-GaAs/Al Superconductor-Semiconductor-Superconductor Junctions

J. Kutchinsky; R. Taboryski; T. Clausen; C. B. Sørensen; A. Kristensen; P. E. Lindelof; J. Bindslev Hansen; C. Schelde Jacobsen; J. L. Skov

doi:10.1103/PhysRevLett.78.931

Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al/n-GaAs/Al Superconductor-Semiconductor-Superconductor Junctions

J. Kutchinsky, R. Taboryski, T. Clausen, C. B. Sørensen, A. Kristensen, P. E. Lindelof, J. Bindslev Hansen, C. Schelde Jacobsen, J. L. Skov

DOI 10.1103/PhysRevLett.78.931 · Physical Review Letters

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Abstract

In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V=±2Δ/e, ±Δ/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1.2	Pressure not reported	unknown