Effects of Dissipation on a Superconducting Single Electron Transistor
J. B. Kycia, J. Chen, R. Therrien, Ç. Kurdak, K. L. Campman, A. C. Gossard, John Clarke
DOI 10.1103/PhysRevLett.87.017002 · Physical Review Letters
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Abstract
We measure the effect of dissipation on the minimum zero-bias conductance, G0min, of a superconducting single electron transistor (sSET) capacitively coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Depleting the 2DEG with a back gate voltage decreases the dissipation experienced by the sSET in situ. We find that G0min increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm et al. in which the leads coupled to the sSET are represented by lossy transmission lines.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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