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Epitaxial Strain and Superconductivity in La2−xSrxCuO4 Thin Films

I. Bozovic, G. Logvenov, I. Belca, B. Narimbetov, I. Sveklo

DOI 10.1103/PhysRevLett.89.107001 · Physical Review Letters

T1

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Abstract

The report that Tc was doubled in underdoped La2−xSrxCuO4 films under compressive epitaxial strain has stirred great interest. We show that such films are extremely sensitive to oxygen intake, even at very low temperature, with startling consequences including colossal lattice expansion and a crossover from semiconductor to metallic behavior. We can bring Tc up to 40 K in La2CuO4 films on SrTiO3 substrates—without any Sr doping and under tensile strain. On LaSrAlO4 substrates, we reached Tc=51.5 K, the highest so far in La2−xSrxCuO4.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2CuO4

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40Pressure not reportedzero_resistance
La2CuO4

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48Pressure not reportedzero_resistance
La1.9Sr0.1CuO4

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49.1Pressure not reportedunknown
La1.9Sr0.1CuO4

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25Pressure not reportedunknown
HgBa2Ca2Cu3O8

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1340.0001 GPaunknown
HgBa2Ca2Cu3O8

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16031 GPaunknown
La2-xSrxCuO4

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51.5Pressure not reportedzero_resistance

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