Pressure-Induced Hole Doping of the Hg-Based Cuprate Superconductors

C. Ambrosch-Draxl; E. Ya. Sherman; H. Auer; T. Thonhauser

doi:10.1103/PhysRevLett.92.187004

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Pressure-Induced Hole Doping of the Hg-Based Cuprate Superconductors

C. Ambrosch-Draxl, E. Ya. Sherman, H. Auer, T. Thonhauser

DOI 10.1103/PhysRevLett.92.187004 · Physical Review Letters

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Abstract

We investigate the electronic structure and the hole content in the copper-oxygen planes of Hg-based high Tc cuprates for one to four CuO2 layers and hydrostatic pressures up to 15 GPa. We find that with the pressure-induced additional number of holes of the order of 0.05e the density of states at the Fermi level changes by approximately a factor of 2. At the same time, the saddle point is moved to the Fermi level accompanied by an enhanced kz dispersion. This finding explains the pressure behavior of Tc and leads to the conclusion that the applicability of the van Hove scenario is restricted. By comparison with experiment, we estimate the coupling constant to be of the order of 1, ruling out the weak coupling limit.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
HgBa2CuO4+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	97	Pressure unresolved	unknown
HgBa2Ca2Cu3O8+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	164	30 GPa	unknown