Observation of a Superconducting Gap in Boron-Doped Diamond by Laser-Excited Photoemission Spectroscopy
K. Ishizaka, R. Eguchi, S. Tsuda, T. Yokoya, A. Chainani, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C.-T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin
DOI 10.1103/PhysRevLett.98.047003 · Physical Review Letters
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Abstract
We investigate the temperature (T)-dependent low-energy electronic structure of a boron-doped diamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the leading edge below T=11 K, indicative of a superconducting gap opening (Δ∼0.78 meV at T=4.5 K). The gap feature is significantly broad and a well-defined quasiparticle peak is lacking even at the lowest temperature of measurement (=4.5 K). We discuss our results in terms of disorder effects on the normal state transport and superconductivity in this system.
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