Superconductivity in Boron-Doped Diamond
K.-W. Lee, W. E. Pickett
DOI 10.1103/PhysRevLett.93.237003 · Physical Review Letters
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Abstract
Superconductivity of boron-doped diamond, reported recently at Tc=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high Tc, leading to very large electron-phonon matrix elements. The calculated coupling strength λ≈0.5 leads to Tc in the 5–10 K range and makes phonon coupling the likely mechanism. Higher doping should increase Tc somewhat, but the effects of three dimensionality primarily on the density of states keep doped diamond from having a Tc closer to that of MgB2.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 40 | Pressure not reported | unknown |
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