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Phonon-mediated superconductivity near the lattice instability in hole-doped hydrogenated monolayer hexagonal boron nitride

Takat B. Rawal, Ling-Hua Chang, Hao-Dong Liu, Hong-Yan Lu, C. S. Ting

DOI 10.1103/PhysRevMaterials.6.054003 · Physical Review Materials

T1

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Abstract

Employing the density functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride (H2BN) has a direct band gap of 2.96 eV in the blue-light region, while the pristine h-BN has a wider indirect band gap of 4.78 eV. The hole-doped H2BN is stable at low carrier density (n) but becomes dynamically unstable at higher n. We predict that it is a phonon-mediated superconductor with a transition temperature (Tc) which can reach ∼31 K at n of 1.5×1014 holes cm−2 near the lattice instability. The Tc could be enhanced up to ∼82 K by applying a biaxial tensile strain at 6% along with doping at n of 3.4×1014 holes cm−2 close to a new lattice instability.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
H2BN

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31Pressure not reportedunknown
H2BN

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82Pressure not reportedunknown

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