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Phonon-Mediated Superconductivity near the Lattice Instability in Hole-doped Hydrogenated Monolayer Hexagonal Boron Nitride

Takat B. Rawal, Ling-Hua Chang, Hao-Dong Liu, Hong-Yan Lu, C. S. Ting

arXiv:2110.00105 · DOI 10.1103/physrevmaterials.6.054003 · 2021-09-30 · Physical Review Materials

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Abstract

Employing the density-functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride (H$_2$BN) has a direct-band gap of 2.96 eV in the blue-light region while the pristine $\textit{h}$-BN has a wider indirect-band gap of 4.78 eV. The hole-doped H$_2$BN is stable at low carrier density ($n$) but becomes dynamically unstable at higher $n$. We predict that it is a phonon-mediated superconductor with a transition temperature ($T_c$) which can reach $\sim$31 K at $n$ of $1.5\times$ $10^{14}$ holes cm$^{-2}$ near the lattice instability. The $T_c$ could be enhanced up to $\sim$82 K by applying a biaxial tensile strain at 6 % along with doping at $n$ of $3.4\times$ 10$^{14}$ holes cm$^{-2}$ close to a new lattice instability.

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FormulaReported Tc (K)Pressure (GPa)Type
H2BN

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31Pressure not reportedunknown
H2BN

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82Pressure not reportedunknown
BN

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41Pressure not reportedunknown

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