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Charge-carrier-type controlled superconducting dome in ZrNxOy films

Xinbo Bai, Fucong Chen, Yuxin Wang, Juan Xu, Ruozhou Zhang, Mingyang Qin, Wenxin Cheng, Jinsong Zhang, Qiuyan Shi, Xu Wang, Beiyi Zhu, Jie Yuan, Qihong Chen, Jian Kang, Kun Jiang, Jiangping Hu, Yangmu Li, Kui Jin, Zhongxian Zhao

DOI 10.1103/PhysRevMaterials.7.094801 · Physical Review Materials

T1

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Abstract

Modifying the normal state charge carriers and the related Fermi surface can significantly affect a material's superconducting state. The recently discovered superconducting dome as a function of chemical concentration in transition metal nitrides provides a promising platform for achieving such control. However, this effort was hindered by synthesis techniques that cannot stabilize the material's structure in the presence of a significant number of nitrogen vacancies. In this study, we employed oxygen-assisting nitrogen gas flow with radio frequency magnetron sputtering to stabilize the crystal structure of nitrogen-deficient zirconium nitride thin films and explore the impact of normal state charge carrier types on the superconducting state. Our electrical and thermoelectrical transport measurements indicate a fine-tuning of the superconducting transition temperature, Tc, through a shift from hole-type to electron-type charge carriers. Additionally, a concurrent strain release, reflected in the change of the film's crystal orientation, is observed in the process.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
ZrNxOy

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.72Pressure not reportedzero_resistance
ZrNxOy

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

5.23Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

5.66Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

6.15Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

6.66Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

6.88Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

6.42Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.78Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.53Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.82Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.93Pressure not reportedzero_resistance
ZrNxOy

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

7Pressure not reportedonset

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