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Superconductivity induced by doping holes in the nodal-line semimetal NaAlGe

Toshiya Ikenobe, Takahiro Yamada, Daigorou Hirai, Hisanori Yamane, Zenji Hiroi

DOI 10.1103/PhysRevMaterials.7.104801 · Physical Review Materials

T1

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Abstract

The nodal-line semimetals NaAlSi and NaAlGe have significantly different ground states despite having similar electronic structures: NaAlSi exhibits superconductivity <7K, while NaAlGe exhibits semiconductive electrical conductivity at low temperatures, indicating the formation of a pseudogap at ∼100K. The origin of the pseudogap in NaAlGe is unknown but may be associated with excitonic instability. We investigated hole-doping effects on the ground state in the solid solution Na(Al1–xZnx)Ge and discovered that the pseudogap is suppressed continuously with increasing Zn content, followed by the appearance of a superconducting dome with the highest transition temperature of 2.8 K. This superconductivity most likely results from excitonic fluctuations.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NaAlSi

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7Pressure not reportedunknown
NaAlGe

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3Pressure not reportedonset
Na(Al1-xZnx)Ge

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2.8Pressure not reportedonset
Na(Al1-xZnx)Ge

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2.8Pressure not reportedonset
Na(Al1-xZnx)Ge

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2.6Pressure not reportedmidpoint

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