Superconductivity induced by doping holes in the nodal-line semimetal NaAlGe
Ikenobe, Toshiya, Yamada, Takahiro, Hirai, Daigorou, Yamane, Hisanori, Hiroi, Zenji
arXiv:2310.04040 · 2023-10-09
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Abstract
The nodal-line semimetals NaAlSi and NaAlGe have significantly different ground states despite having similar electronic structures: NaAlSi exhibits superconductivity below 7 K, while NaAlGe exhibits semiconductive electrical conductivity at low temperatures, indicating the formation of a pseudogap at approximately 100 K. The origin of the pseudogap in NaAlGe is unknown but may be associated with excitonic instability. We investigated hole-doping effects on the ground state in the solid solution Na(Al1-xZnx)Ge and discovered that the pseudogap is suppressed continuously with increasing Zn content, followed by the appearance of a superconducting dome with the highest transition temperature of 2.8 K. This superconductivity most likely results from excitonic fluctuations.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NaAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7 | Pressure not reported | unknown |
| Na(Al1-xZnx)Ge Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.8 | Pressure not reported | unknown |
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