Superconductivity in HfS2 at ultrahigh pressure
Shihui Zhang, Hailun Wang, Hao Liu, Jiapeng Zhen, Shun Wan, Wen Deng, Yonghao Han, Bin Chen, Chunxiao Gao
DOI 10.1103/PhysRevMaterials.7.104802 · Physical Review Materials
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Abstract
Adjusting the electrical and optical properties of two-dimensional materials by pressure is an important method to realize their applications in the fields of electronics and optoelectronic devices. Here, we report the highly tunable transport properties of the layered semiconductor HfS2 under high pressure, including metallization and superconducting transition. HfS2 is one of the IVB group transition-metal dichalcogenides, exhibiting a large band gap in ambient condition. The bandgap decreases from ∼2.0 to ∼1.1eV within 15GPa by pressure tuning, and HfS2 becomes metallic at ∼60GPa. Moreover, a superconducting transition is observed under ∼126GPa, and the superconducting critical temperature (Tc) increases with further compression, reaching ∼4.4K at ∼153GPa. Hall-effect measurements show that pressure changes the carrier-concentration type from electron dominated to hole dominated at ∼145GPa. Two structural transitions are found at moderate pressure, and one of them agrees with the changes observed in absorption and Raman spectroscopy measurements. Manipulation of the transport and optical properties of HfS2 by pressure provides important information for its practical applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| HfS2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2 | 126 GPa | onset |
| HfS2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.4 | 153 GPa | onset |
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