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Pressure-induced superconducting phases and electronic reconstruction in layered RbMgBi

Xintian Chen, Wenxuan Chen, Yuxin Yang, Yazhou Zhou, Cheng Huang, Pengyu Wang, Yangfan Gao, Defang Duan, Shu Cai, Jinyu Zhao, Jinyu Han, Ke Yang, Aiguo Li, Sheng Jiang, Qi Wu, Tianping Ying, Jing Guo, Liling Sun

DOI 10.1103/p9sl-p6mm · Physical Review B

T1

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Abstract

We report the discovery of pressure-induced superconductivity transitions in RbMgBi, a nonmetallic layered compound under ambient conditions. Upon compression, RbMgBi first undergoes an insulator-to-metal transition at ∼4.5GPa, coinciding with the emergence of a superconducting phase (SC-I). A second superconducting phase (SC-II) appears near 10.4 GPa, with both phases coexisting until SC-II becomes dominant above ∼14GPa. High-pressure ac susceptibility confirmed the bulk superconducting nature in both phases. High-pressure x-ray diffraction reveals a substantial c-axis contraction and a structural transition from a tetragonal P4/nmm to an orthorhombic Cmcm phase near 5.5 GPa, underscoring the role of interlayer spacing in enabling superconductivity. Hall measurements show marked carrier evolution at the critical pressures, while first-principles calculations indicate a pressure-driven electronic reconstruction—from a single-band regime to a multiband state with enhanced Fermi velocity and superfluid density. Our results demonstrate a strong interplay between structural compression, carrier dynamics, and superconducting behavior, offering new insight into pressure-tuned superconductivity and guiding principles for designing emergent superconductors via coupled structural-electronic engineering.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
RbMgBi

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6.64.5 GPazero_resistance
RbMgBi

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52.8 GPaonset
RbMgBi

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—6.1 GPaunknown
SrPt2As2

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—Pressure not reportedunknown
BaPt2Sb2

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—Pressure not reportedunknown

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