Thermally activated epitaxy of NbO
Sandra Glotzer, Jeong Rae Kim, Joseph Falson
DOI 10.1103/tv12-d5vs · Physical Review Materials
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Abstract
We demonstrate a thermally activated epitaxy window for the growth of NbO at temperatures exceeding 1000 ∘C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbO Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.61 | Pressure not reported | unknown |
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