Thermally-Activated Epitaxy of NbO

Sandra Glotzer; Jeong Rae Kim; Joseph Falson

doi:10.1103/tv12-d5vs

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Thermally-Activated Epitaxy of NbO

Sandra Glotzer, Jeong Rae Kim, Joseph Falson

arXiv:2601.16313 · DOI 10.1103/tv12-d5vs · 2026-01-22 · Physical Review Materials

T2experimental

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Abstract

We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 $^o$C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbO Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1.61	Pressure not reported	unknown
NbO Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	1.345	Pressure not reported	unknown
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	9.25	Pressure not reported	unknown