Energy gap measurement of nanostructured thin aluminium films for use in single Cooper-pair devices

N. A. Court; A. J. Ferguson; R. G. Clark

doi:10.1088/0953-2048/21/01/015013

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Energy gap measurement of nanostructured thin aluminium films for use in single Cooper-pair devices

N. A. Court, A. J. Ferguson, R. G. Clark

arXiv:0706.4150 · DOI 10.1088/0953-2048/21/01/015013 · 2007-06-28 · Superconductor Science and Technology

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Abstract

Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $Δ$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the small area superconductor-insulator-superconductor (SIS) tunnel junctions. In agreement with previous measurements we have observed an increase in the superconducting energy gap of aluminium with a decrease in film thickness. In addition, we find grain size in small area films with thickness \textbf{$\geq$} 10 nm has no appreciable effect on energy gap. Finally, we utilize 7 and 30 nm films in a single Cooper-pair transistor, and observe the modification of the finite bias transport processes due to the engineered gap profile.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure unresolved	—